The Fuji IGBT Modules Application Manual provides comprehensive guidance on the proper selection, installation, operation, and maintenance of Fuji Electric's Insulated Gate Bipolar Transistor modules. These high-performance power semiconductor devices are widely used in industrial applications including motor drives, power supplies, renewable energy systems, and industrial automation. Below are key sections covering specifications, installation procedures, thermal management, protection circuits, and troubleshooting guidelines.
Fuji IGBT modules feature advanced trench gate field-stop technology for high efficiency and reliability in power conversion applications.
| Feature | Description |
|---|---|
| Voltage Rating | 600V to 1700V series available |
| Current Rating | 10A to 2400A depending on module type |
| Package Types | Standard, 6-pack, 7-pack, dual, transfer mold |
| Isolation Voltage | 2500V AC for 1 minute |
| Operating Temperature | -40°C to +150°C (Tj max) |
| Switching Frequency | Up to 50kHz depending on series |
| Gate Voltage | ±20V maximum, ±15V recommended |
| Collector-Emitter Saturation | Low VCE(sat) for reduced conduction losses |
| Short Circuit Withstand | 10μs typical at rated conditions |
| Reverse Bias SOA | Wide RBSOA for robust operation |
Detailed electrical characteristics and maximum ratings for proper device selection and application design.
WARNING! Exceeding maximum ratings may cause permanent device damage. Always operate within specified limits.
Proper mounting procedures ensure optimal thermal performance and mechanical reliability.
CAUTION! Avoid mechanical stress on terminals. Use proper tools for mounting.
Proper gate drive design is critical for optimal switching performance and reliability.
Gate Voltage: +15V/-8V typical for turn-on/turn-off. Gate Resistance: Controls switching speed and EMI. Isolation: Reinforced isolation required for high-side drives. Layout: Minimize parasitic inductance in gate loop. Protection: Implement DESAT detection, soft turn-off, Miller clamp. Power Supply: Low-inductance decoupling capacitors near module.
Essential protection features to prevent device failure under abnormal conditions.
Tip: Implement redundant protection schemes for critical applications.
Typical circuit configurations for various power conversion topologies.
WARNING! Follow proper snubber circuit design to limit voltage overshoot.
Regular maintenance procedures to ensure long-term reliability and performance.
High voltage safety procedures for installation, testing, and maintenance operations.
CAUTION! High voltage present even after power removal. Wait 5 minutes and verify discharge before handling.
Fuji IGBT modules comply with international standards including UL, CE, and RoHS directives. All products meet IEC 60747 semiconductor standards and are manufactured under ISO 9001 quality systems. For technical support and certification documents, visit www.fujielectric.com or contact your local Fuji Electric representative.
| Symptom | Possible Cause | Corrective Action |
|---|---|---|
| Module failure | Overcurrent, overvoltage, overtemperature | Check protection circuits, verify derating, inspect cooling system. |
| High switching losses | Inadequate gate drive, high parasitic inductance | Optimize gate resistance, improve PCB layout, verify gate voltage. |
| Voltage overshoot | High di/dt, inadequate snubber | Increase gate resistance, add snubber circuit, reduce busbar inductance. |
| Thermal shutdown | Insufficient cooling, overload | Check heatsink, verify airflow, reduce load current. |
| Gate damage | ESD, overvoltage, oscillation | Implement ESD protection, add gate clamp, use twisted pair wiring. |
Testing: Use curve tracer for basic functionality check. Replacement: Always replace with identical part number.
Technical Support: Contact Fuji Electric technical service at +81-3-5435-7200 or www.fujielectric.com